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THE METHOD OF CONTACTLESS DETERMINATION OF QUANTIZED HALL RESISTANCE OF 2D SEMICONDUCTOR NANOSTRUCTURES

A. A. Kornilovich, doctor of technical science, professor, senior researcher RSREU; This email address is being protected from spambots. You need JavaScript enabled to view it.
V. G. Litvinov, PhD, associate professor RSREU; This email address is being protected from spambots. You need JavaScript enabled to view it.

The method for contactless determination of 2D electron gas transport parameters in nanostructures by magnetic quantum effects is described. The aim of the work is the development and testing of contactless method for determining the quantized Hall resistance of two-dimensional semiconductor nanostructures. The dependence of the power of microwave radiation passing through GaAs 2D-layers from quantizing magnetic field was investigated. Obtained periods of Shubnikov’s oscillations of microwave radiation passing were used for free electrons concentration finding. The quantized Hall resistance of 2D-GaAs layer and the Landau levels filling factor are determined from the values of magnetic field corresponding to extreme values of microwave power absorption. The relationship between the filling factor and the Landau level number, resulting orbital and spin quantum numbers interacting in LS-coupling of electrons is obtained.

Key words: methods of diagnostics, quantum Hall effect, 2D-gas, Landau levels, microwave radiation,
LS-coupling.

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