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CLASSIFICATION OF THIN-FILM STRUCTURE RELIEF SELF-ORGANIZATION DEGREE BY 2D DFA AND AMI METHOD

N. V. Rybina, Ph.D., associate professor, RSREU, Ryazan; This email address is being protected from spambots. You need JavaScript enabled to view it.
S. P. Vikhrov, Ph.D., professor, chief researcher, RSREU, Ryazan; This email address is being protected from spambots. You need JavaScript enabled to view it.
N. B. Rybin, Ph.D., leading engineer, RSREU, Ryazan; This email address is being protected from spambots. You need JavaScript enabled to view it.

The aim of this work - classification of thin-film structures according to the degree of self-organization by scaling index, average mutual information and maximum mutual information determined by twodimensional detrended fluctuation analysis and average-mutual-information method. Model surfaces with different degrees of ordering (self-organization) were produced. Their relief was studied by 2D detrended fluctuation analysis and average-mutual-information method. Based on the research results of model surfaces, value lists of scaling index, average and maximum mutual information were compiled which allow to classify thin-film structures by the degree of self-organization. An approvement of obtained results was realized using a-Si:H thin-film samples. An attempt to estimate the influence of the technological regimes of the growth (time of deposition, pressure of hydrogen in the chamber) on selforganization processes in a-Si:H films was made. 

Key words: thin-film structures, order, surface, self-organization, average mutual information, maximal mutual information, two-dimensional detrented fluctuation analysis, correlation properties, scaling index.

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