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UDC 621.315.592

PHYSICO-CHEMICAL CHARACTERISTICS OF NANOSTRUCTURING PROCESSES IN POLYCRYSTALLINE PHOTODETECTOR GRAIN INTERFACES BASED ON LEAD CHALCOGENIDES

E. V. Maraeva, teaching assistant of Micro- and nanoelectronic department, Saint-Petersburg State Electrotechnical University «LETI» named after V. I. Ulyanov (Lenin), PhD (physics and mathematics); This email address is being protected from spambots. You need JavaScript enabled to view it.
V. A. Moshnikov, professor of Micro- and nanoelectronic department, Saint-Petersburg State Electrotechnical University «LETI» named after V. I. Ulyanov (Lenin), Doctor of Science (physics and mathematics), full professor; This email address is being protected from spambots. You need JavaScript enabled to view it.

The article discusses the results of a comprehensive thermodynamic analysis of phase equilibria in the system Pb-So by the methods of diagrams of partial pressures and triangulation, the selection of technological conditions for obtaining photodetectors based on lead chalcogenides with high speed and experimental data on realization of photosensitive structures. The aim of the work is to create a model explaining experimental results and illustrating the reasons for choosing technological conditions to receive high speed photo detectors. The formation of high-speed recombination centers in grain interfaces is explained.

Key words: lead chalcogenides, photoconductivity, phase equilibrium, triangulation method.

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