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UDC 621.382

PRODUCING FIELD EFFECT TRANSISTORS WITH TWO-DIMENSIONAL MoS2 CHANNEL

V. S. Generalov, master student, MPEI, department of Electronics and Nanoelectronics, Moscow; This email address is being protected from spambots. You need JavaScript enabled to view it.
A. I. Popov, Dr. Sc. (Tech.), professor, MPEI, department of Electronics and Nanoelectronics, Moscow; This email address is being protected from spambots. You need JavaScript enabled to view it.

The aim of the work is to produce and research MOSFET transistors with two-dimensional channel based on MoS2 as a channel material. The analysis is made to evaluate the prospects of MoS2 as a channel material for MOSFETs from the scalability perspective. The technology for producing top- and back-gate MOSFETs is developed and tested in laboratory environment. Voltage-current characteristics of the produced transistors are extracted and investigated.

Key words: MOSFET, molybdenum disulfide, transition metal dichalcogenides, mechanical cleaving, exfoliation, method of dry transfer, e-beam lithography.

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