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UDC 621.383

MEASUREMENT OF THE BUILT-IN ELECTRIC FIELDS DISTRIBUTION IN SEMICONDUCTOR BARRIER STRUCTURES

S. P. Vikhrov, Dr. Sc. (Phys. and Math.), full professor, Chief Researcher, RSREU, Ryazan; This email address is being protected from spambots. You need JavaScript enabled to view it.
N. V. Vishnyakov, Ph.D. (Tech.), Head of Regional Center of Probe Microscopy for collective use of RSREU; This email address is being protected from spambots. You need JavaScript enabled to view it.
A. D. Maslov, post-graduate student, RSREU, Ryazan; This email address is being protected from spambots. You need JavaScript enabled to view it.
V. G. Mishustin, Ph.D. (Phys. and Math.), assistant professor, RSREU, Ryazan; This email address is being protected from spambots. You need JavaScript enabled to view it.
A. G. Romanov, post-graduate student, RSREU, Ryazan; This email address is being protected from spambots. You need JavaScript enabled to view it.

The problem of experimental measuring of built-in electric fields in multilayer barrier homo- and heterostructures based on crystal and disordered semiconductors is studied. The aim of the work is to apply the method of non-stationary photoconductivity current compensation for investigating semiconductor barrier p-i-n and heterostructures. The experimental method and its mathematical model, measuring equipment to realize this method and used test structures are described. The results of an experimental study of the distribution of the built-in electric fields in the p-i-n structure on a-Si:H and a-Si:H/c-Si heterostructure, ana-lysis of experimental data are presented. The direction of work on the further development of the method is formulated.

Key words: electric field distribution, compensation method, non-stationary photoconductivity current, homo- and heterojunctions, solar cells.

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