This email address is being protected from spambots. You need JavaScript enabled to view it.
 
+7 (4912) 72-03-73
 
Интернет-портал РГРТУ: http://rsreu.ru

UDC 621.315.592

STUDYING THE INFLUENCE OF INTERMEDIATE HYDROGEN PLASMA TREATMENT ON AMORPHOUS SILICON LAYER PROPERTIES IN TWO-STAGE DEPOSITION

М. А. Reginevich, Director General, «RST» LLC, Moscow, Russia;
orcid.org/0000-0003-0412-2200, e-mail This email address is being protected from spambots. You need JavaScript enabled to view it.
S. M. Karabanov, Dr. in technical sciences, full professor, RSREU, Ryazan, Russia;
orcid.org/0000-0003-3887-7062, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

The aim of this work is to investigate the effect of hydrogen plasma treatment of layers of amorphous hydrogenated silicon on their defectiveness in the manufacture of heterojunction solar cells. Hydrogen plasma treatment after deposition of the first layer of amorphous hydrogenated silicon with thickness of 5 – 6 nm allows passivation of defects in layer volume and, due to surface hydrogenation, creates conditions for defect-free growth of next layer to total thickness of 10 nm. The lifetime of minority charge carriers increases from 3,5 to 5 ms. The parameters of treatment with hydrogen plasma are determined, which makes it possible to reduce the level of defectiveness of intrinsic hydrogenated amorphous silicon layers in the production of high-efficiency solar cells.

Key words: silicon crystalline solar cells, HJT, amorphous intrinsic silicon layers, PECVD, hydrogen plasma treatment.

 Download