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PROCESS TECHNOLOGY IMPACT ON DEFECT FORMATION IN AMORPHOUS SILICON LAYERS FOR HETEROJUNCTION SOLAR CELLS

М. А. Reginevich, Director General, «RST» llc, Moscow, Russia;
orcid.org/ 0000-0003-0412-2200, e-mail This email address is being protected from spambots. You need JavaScript enabled to view it.
S. M. Karabanov, Dr. in technical sciences, full professor, RSREU, Ryazan, Russia;
orcid.org/0000-0003-3887-7062, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

The aim of this work is to study the influence of process step factors on the formation of defects in amorphous silicon in the manufacture of heterojunction solar cells (HJT). Defects of layers in amorphous hydrogenated silicon, their appearance and changes in the structure of layers in the process of manufacturing a solar cell are studied. The change in amorphous silicon structure after hydrogen plasma treatment and annealing after the process of transparent conducting oxide deposition is carried out. The parameters of the processes that allow reducing the level of defectiveness in the production of high-performance solar cells have been determined.

Key words: silicon crystalline solar cells, amorphous intrinsic silicon layers, PECVD, hydrogen plasma treatment.

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