UDC 621.315
RESEARCH OF CHARGE TRANSFER MECHANISMS IN METAL-ZnO-SILICON HETEROSTRUCTURES
A. R. Semenov, postgraduate student, RSREU, Ryazan, Russia;
orcid.org/0000-0003-2780-5661, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
M. V. Golovanova, student RSREU, Ryazan,
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V. G. Litvinov, Ph.D. (Phys. and Math.), associate professor, RSREU, Ryazan, Russia;
orcid.org/0000-0001-6122-8525, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
D. G. Gromov, Dr. Sc. (Tech.), full professor, MIET, Zelenograd, Russia;
orcid.org/0000-0002-4563-9831, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
S. P. Oleynik, Ph.D. (Phys. and Math.), Head of the Department, MIET, Zelenograd, Russia;
orcid.org/0000-0001-8514-9530, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
T. A. Kholomina, Dr. Sc. (Phys. and Math.), full professor, Head of the Department, RSREU, Ryazan, Russia;
orcid.org/0000-0003-3902-618X, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
A. V. Ermachikhin, Ph.D. (Phys. and Math.), associate professor, RSREU, Ryazan, Russia;
orcid.org/0000-0002-3808-9691, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
Results of the study of charge transfer mechanisms in thin films of zinc oxide on the example of metal-ZnO-silicon heterostructures under the action of electric field based on experimental current-voltage and high-frequency capacitance-voltage characteristics were considered. Obtained results have shown the significant influence of surface defects and electron traps on electrophysical parameters and energy bands of Me/ZnO/Si based heterostructures. The aim of this work is to study charge transfer mechanisms of metalinsulator-semiconductor structures based on ZnO/Si heterojunction as well as to determine their band structures. ZnO films were grown by pyrolytic decomposition method at different annealing conditions. Electrical properties of the structures were studied by the methods of high-frequency capacitance-voltage characteristics and current-voltage characteristics.
Key words: charge transfer mechanisms, heterostructure, ZnO, band diagrams, I-U-characteristics, C-U-characteristics.