Vestnik of Ryazan State
Radio Engineering University

UDC 621.382

ELECTRICAL IC TRIMMING METHOD USING POLYSILICON FUSES

M. K. Burukhin, Engineer, JSC «OKB MEL», Kaluga, Russia;

orcid.org/0009-0002-9707-5406, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

S. V. Ryzhov, Engineer, JSC «OKB MEL», Kaluga, Russia;

orcid.org/0000-0001-5330-2537, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

D. V. Andreev, Kaluga Branch of BMSTU, Kaluga, Russia;

orcid.org/0000-0001-9080-1028, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

M. V. Romanov, Head of Department, JSC «OKB MEL», Kaluga, Russia;

orcid.org/0000-0003-1898-5939, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

This article provides a detailed overview of the method of trimming integrated circuits (ICs) using polysilicon fuse jumpers. The aim is to develop and apply a modified trimming method using burnt-out jumpers in reference voltage amplifier circuit. The use of trim to achieve the required reference voltage in op-amp circuit is investigated and the corresponding calculations are presented. As part of the study, experimental tests were carried out with test modules, on which the jumper burnout mode was worked out and their resistance was measured. The results of the study confirmed the effectiveness of applying polysilicon burn-out jumpers in trimming process. To facilitate calculations and analysis, a special calculator application has been developed. In addition, the results of modeling the trimming process for different initial values of parameters using Monte Carlo method are presented. The obtained results confirm the efficiency of the method proposed and its applicability in practice

Key words: : technological variation of parameters, IC trimming, polysilicon fuses, Symica DE.

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UDC 538.958:535.8

FEATURES OF BAND DIAGRAM OF SEMICONDUCTOR STRUCTURE WITH POROUS SILICON FILM FORMED BY METAL-STIMULATED ETCHING

V. V. Tregulov, Ph.D. (in technical sciences), associate professor, department of Physics, RSU named for S. Yesenin, Ryazan, Russia; orcid.org/0009-0001-1441-6918, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

G. N. Skoptsova, lecturer, research assistant, department of Physics, RSU named for S. Yesenin, Ryazan, Russia;

orcid.org/0009-0009-6224-7555, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

N. V. Rybina, Ph.D. (in physics and mathematics), associate professor, department of Micro- and Nanoelectronics, RSREU, Ryazan, Russia; orcid.org/0000-0003-0377-5605, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

N. B. Rybin, Ph.D. (in physics and mathematics), associate professor, department of Micro- and Nanoelectronics, RSREU, Ryazan, Russia; orcid.org/0000-0003-2000-0158, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

The results of studying frequency dependence of C-V characteristics of semiconductor structure with a porous silicon film grown by metal-stimulated etching are presented. A zone diagram model has been developed. The influence of thermal annealing modes on the nature of conduction inversion mode manifestation is investigated

Key words: : porous silicon, metal-assisted etching, thermal annealing, capacitance-voltage characteristics, traps, band diagram.

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UDC 004.932.2

SURFACE DEFECTS ANALYSIS BY INFORMATION-CORRELATION CHARACTERISTICS

N. V. Rybina, PhD. (in physics and mathematics), associate professor, department of Micro- and Nanoelectronics, RSREU, Ryazan, Russia; orcid.org/0000-0003-0377-5605, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

N. B. Rybin, PhD. (in physics and mathematics), associate professor, department of Micro- and Nanoelectronics, RSREU, Ryazan, Russia; orcid.org/0000-0003-2000-0158, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

V. D. Stepnov, post-graduate student, RSREU, Ryazan, Russia;

orcid.org/0009-0007-1945-751X, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

The methods of analyzing defects on the surface of solid-state materials from their images are considered. The results of processing images with various types of defects on the surface using fluctuation analysis and the method of average mutual information are presented.

Key words: : surface, image analysis, method of detrended fluctuation analysis (2D DFA), average mutual information (AMI), information and correlation characteristics.

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UDC 543.084.085: 541.12.084.08

STUDYING THE OPERATING FEATURES OF QUADRUPOL MASS FILTER IN UPPER AND LOWER VERTS OF STABILITY QUADRANGLE IN THE PRESENCE OF ELECTRIC FIELD NONLINEARITY

M. V. Dubkov, Dr. in technical sciences, full professor, Head of the Department, RSREU, Ryazan, Russia;

orcid.org/0000-0002-5791-0991, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

M. A. Burobin, Ph.D. (in technical sciences), associate professor, RSREU, Ryazan, Russia;

orcid.org/0000-0003-4465-6362, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

V. V. Ivanov, Ph.D. (in technical sciences), associate professor, RSREU, Ryazan, Russia;

orcid.org/0000-0002-5655-0111, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

K. A. Vetshev, graduate student, RSREU, Ryazan, Russia;

orcid.org/0009-0000-7789-7520, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

A. D. Rubtsova, graduate student, RSREU, Ryazan, Russia;

orcid.org/0009-0004-0215-908x, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

The features of quadrupole mass filter operation in upper and lower vertices of stability quadrangle are studied under pulsed power supply and in the presence of higher-order components in potential distribution. The aim of this work is to compare the influence of various higher-order components on the analytical characteristics of a quadrupole mass filter when operating at upper and lower vertices of stability quadrangle using pulsed power. Using numerical modeling methods, a comparison was made of the operating features of the quadrupole mass filter both in the absence and in the presence of higher-order components in the potential distribution. The research shows that with increasing resolution, the ratio of the intensities of mass peaks increases when working at lower and upper vertices, respectively. Also, if there are certain higher-order components in potential distribution associated with symmetrical distortions of electrode system, the resolution of mass filter increases, both at upper and lower vertices of stability quadrangle.

Key words: : quadrupole mass filter, stability quadrangle, higher order components, mass peak, resolution, mass peak intensity.

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