UDC 621.315.592
INVESTIGATION OF SILICON NITRIDE AS A MASK FOR COPPER PLATED GRID OF HETEROJUNCTION SILICON SOLAR CELLS
М. А. Reginevich, General manager, «RST» llc, Moscow, Russia;
orcid.org/0000-0003-0412-2200, e-mail This email address is being protected from spambots. You need JavaScript enabled to view it.
S. M. Karabanov, Dr. Sc. (Tech.), full professor, RSREU, Ryazan, Russia;
orcid.org/0000-0003-3887-7062, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
V. E. Bugrov, Ph.D. (Phys. and Math.) researcher, «Femtonica» llc, Moscow, Russia;
orcid.org/0000-0002-8279-2261/, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
The aim of the work is to research the possibilities of applying silicon nitride as a mask for copper plating of hetero-junction n-type monocrystalline silicon solar cells as well as to study the features of contact windows opening by femtosecond pulse laser. The fluence that is necessary to open contact windows when using thin silver film layer is determined. The results clarify the process of thin dielectric film ablation from seed layer by femtosecond laser pulses.
Key words: silicon crystalline solar cells, hetero-junction solar elements, amorphous silicon layers, silicon nitride, femtosecond laser pulse, galvanic copper deposition