UDC 621.38.049.77; 621.3.089.2
COMPLEX STUDIES OF MULTILAYER BARRIER STRUCTURES OF MICRO- AND NANOELECTRONICS
N. V. Vishnyakov, Ph.D. (Tech.), associate professor, associate professor, leading researcher, department of Micro- and Nanoelectronics, RSREU, Ryazan, Russia;
orcid.org/0000-0002-1270-3446, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
V. G. Litvinov, Dr. Sc. (Phys. and Math.), associate professor, head of department of Micro- and Nanoelectronics, leading researcher, RSREU, Ryazan, Russia;
orcid.org/0000-0001-6122-8525, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it. V. G. Mishustin, Ph.D. (Phys. and Math.), associate professor, associate professor, senior researcher, department of Micro- and Nanoelectronics, RSREU, Ryazan, Russia;
orcid.org/0000-0002-6564-1074, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
V. V. Gudzev, Ph.D. (Phys. and Math.), associate professor, senior researcher, department of Micro- and Nanoelectronics, RSREU, Ryazan, Russia;
orcid.org/0000-0002-4638-5706, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
A. V. Ermachikhin, Ph.D. (Phys. and Math.), associate professor, department of Micro- and Nanoelectronics, RSREU, Ryazan, Russia; orcid.org/0000-0002-3808-9691, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
A. V. Vasin, postgraduate student, RSREU, Ryazan, Russia;
orcid.org/0000-0003-4911-7800, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
Complex approach to choose methods and techniques of the research allows us to optimize the process of measurements as well as to conduct an extended analysis of multilayer barrier micro- and nanostructures properties. The aim of the work is to develop a complex approach to the study of multilayer barrier structures of micro- and nanoelectronics that means collaborated application of experimental techniques based on various physical properties of measurements and to make a measuring stand of complex diagnostics. The objects of the research is the structures of photoelectric converters on the basis of crystalline and hydrogenated amorphous silicon including HIT-structures and two-stage thin-film solar cells based on a-Si:H and aSiC:H. Measuring and analytical complex to implement the informative techniques offered is developed. The results of the study allowed determining activation energies and layer concentration of three electrically active deep levels, refining the positions of Fermi levels in a-Si:H(p) layer as well as on the section border aSi:H(i)/c-Si(n). High density of localized states found in a mobility gap of undoped a-Si:H (1016 – 1018 eV-1 cm-3 ) leads to a tunnel-transparent SCR layer close to a-Si:H/c-Si border. Complex approach to research the properties of multilayer barrier structures of micro- and nanoelectronics elements allows us to verify experimental results and minimize instrumental and time costs for measurements.
Key words: crystalline and disordered semiconductors, multilayer barrier structures, HIT structures, borders, deep levels.