UDC 541-67:661.863/888
OPTICAL PROPERTIES OF AMORPHOUS ARSENIC SELENIDE FILMS PREPARED BY SPIN-COATING TECHNOLOGY
S. A. Kozyukhin, PhD (Chemistry), Full Professor, IGIC RAS, Moscow; This email address is being protected from spambots. You need JavaScript enabled to view it.
Nguyen Thi Hang, post-graduate student, MPGU, Moscow; This email address is being protected from spambots. You need JavaScript enabled to view it.
A. A. Korlyukov, PhD (Chemistry), Leading researcher, INEOS RAS, Moscow; This email address is being protected from spambots. You need JavaScript enabled to view it.
A. A. Polohin, engineer, National Research University MIET, Moscow; This email address is being protected from spambots. You need JavaScript enabled to view it.
A. V. Volkova, Ph.D. (Chemistry), engineer, National Research University MIET, Moscow; This email address is being protected from spambots. You need JavaScript enabled to view it.
P. I. Lazarenko, Ph.D. (Engineering), Associate Professor, National Research University MIET, Moscow; This email address is being protected from spambots. You need JavaScript enabled to view it.
The aim of this work was to study the optical properties of As2Se3 semiconducting amorphous films prepared by the spin-coating method. A distinctive feature of this method is the possibility of thin films preparation under the conditions close to equilibrium, and also the relative simplicity and accessibility in comparison with other technologies for preparing thin films based on chalcogenide compounds. The films prepared were characterized using X-ray diffraction, IR spectroscopy, atomic force microscopy and Raman scattering, which led us to conclusions about their phase state, impurity composition and structure. Optical transmission methods and spectral ellipsometry were used to study the optical characteristics of amorphous films and to perform a comparative analysis with similar parameters for thin film, which are known from the literature. It was shown that amorphous films prepared by spin-coating have an optical band gap ΔEg = 1,64 eV and a dispersion of refractive index in the visible range between 2.2 and 3.1.
Key words: amorphous As2Se3 thin films, spin-coating technology, optical properties, optical bang gap, optical constants n and k.