UDC 621.315
INVESTIGATION OF SURFACE STATES SPECTRA ON ZnO/Si INTERFACE
V. G. Litvinov, Ph.D. (Phys. and Math.), associate professor, RSREU, Ryazan; This email address is being protected from spambots. You need JavaScript enabled to view it.
A. R. Semenov, postgraduate student, RSREU, Ryazan; This email address is being protected from spambots. You need JavaScript enabled to view it.
T. A. Kholomina, Dr. Sc. (Phys. and Math.), full professor, Head of the Department, RSREU, Ryazan; marta.This email address is being protected from spambots. You need JavaScript enabled to view it.
A. V. Ermachikhin, Ph.D. (Phys. and Math.), associate professor, RSREU, Ryazan; This email address is being protected from spambots. You need JavaScript enabled to view it.
N. B. Rybin, Ph.D. (Phys. and Math.), associate professor, RSREU, Ryazan; This email address is being protected from spambots. You need JavaScript enabled to view it.
D. G. Gromov, Ph.D. (technical sciences), full professor, MIET, Zelenograd; This email address is being protected from spambots. You need JavaScript enabled to view it.
The results of the investigation of surface states spectra on ZnO heterostructure interface boundary ased on experimental high-frequency capacitance-voltage characteristics were considered. Obtained results show the significant influence of surface defects and electron traps on electrophysical parameters of ZnO/Si based heterostructures. The correlation between the sizes of granules and ZnO/Si interface traps concentration was found. The aim of this work was theoretical and experimental investigation of metalinsulator-semiconductor structures on the basis of ZnO/Si heterojunction. ZnO films were grown by pyrolytic decomposition method at different annealing conditions. Electrical properties of the structure were studied by method of high-frequency capacitance-voltage characteristics. Structure and morphology of ZnO layers were studied by scanning electron microscopy.
Key words: surface states spectra, heterostructure, ZnO, C-V-characteristics.