UDC 004.932.2
METHOD DEVELOPMENT OF THREE-DIMENSIONAL VISUALIZATION OF SILICON BRICKS MULTICRYSTALLINE STRUCTURE
S. M. Karabanov, Dr. Sc. (Tech.), full professor, chief researcher, department of electronic devices, RSREU, Ryazan, Russia; This email address is being protected from spambots. You need JavaScript enabled to view it.
A. E. Serebryakov, Ph.D. (Tech.), assistant professor, RSREU, Ryazan, Russia; This email address is being protected from spambots. You need JavaScript enabled to view it.
O. A. Belyakov, quality manager, HELIOS-Resource Ltd., Saransk, Russia; This email address is being protected from spambots. You need JavaScript enabled to view it.
D. V. Suvorov, Ph.D. (Tech.), manager CPTM, RSREU, Ryazan, Russia; This email address is being protected from spambots. You need JavaScript enabled to view it.
A. S. Karabanov, general manager, HELIOS-Resource Ltd., Saransk, Russia; This email address is being protected from spambots. You need JavaScript enabled to view it.
This paper presents a description of digital processing method of silicon wafers images, which allows us to restore a three-dimensional internal structure of silicon brick. They are sorted on the basis of initial images of silicon wafer photoluminescence intensity. The order of the images is fully consistent with the location of the wafers in silicon brick before cutting into wafers. Radon transformation algorithms are used for image alignment and correlation analysis methods. The spatial resolution of the method is 300 μm, which allows it to be used to study one-dimensional (dislocations) and two-dimensional defects (grain boundaries) of the crystal lattice. The aim of the article is to create a method of three-dimensional visualization of silicon bricks multi-crystalline structure with selection of internal defects area and diffusion pollution area.
Key words: digital image processing, three-dimensional model, multicrystalline silicon, defects, photoluminescence.