UDC 004.932.2
COMPARATIVE ANALYSIS OF METHODS FOR CALCULATING MUTUAL CORRELATION IN PROCESSING OF PHOTOLUMINISCENCE IMAGES OF MULTICRYSTALLINE SILICON WAFERS
A. E. Serebryakov, Ph.D. (Tech.), assistant professor, RSREU, Ryazan, Russia;
orcid.org/0000-0002-8593-7374, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
O. A. Belyakov, quality manager, HELIOS-Resource Ltd., Saransk, Russia;
orcid.org/0000-0003-4138-9684, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
A method for calculating a correlation coefficient of photoluminescence intensity images of silicon wafers is considered in the framework of three-dimensional visualization of silicon ingot multicrystalline structure. The aim is to find optimal geometric parameters of comparison area of two photoluminescence intensity images to calculate their correlation coefficient and angle of rotation, designed to bring images to the same relative position. Original images obtained on the production line to parameters control of the wafers, as a rule, are rotated relative to each other by a multiple of 90°. The paper presents the results of a comparative analysis of the group of annular comparison regions with different radius and thicknesses, which allow eliminating errors in image processing in a visualization method of silicon ingot crystal structure. Correlation coefficients are calculated using MATLAB software environment.
Key words: digital image processing, correlation coefficient, reference area, rotation angle, photoluminescence image, multicrystalline silicon wafers.