UDC 538.958:535.8
STUDY OF HEAT TREATMENT MODES INFLUENCE ON INFORMATION-CORRELATION PROPERTIES OF POROUS SILICON FILM SURFACE
N. V. Rybina, Ph.D. (Phys. and Math.), associate professor, associate professor, Department of Micro- and Nanoelectronics, RSREU, Ryazan, Russia;
orcid.org/0000-0003-0377-5605, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
N. B. Rybin, Ph.D. (Phys. and Math.), associate professor, associate professor, Department of Micro- and Nanoelectronics, RSREU, Ryazan, Russia;
orcid.org/0000-0003-2000-0158, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
V. V. Tregulov, Ph.D. (Tech.), associate professor, department of Physics, RSU named for S. Yesenin, Ryazan, Russia;
orcid.org/0009-0001-1441-6918, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
G. N. Skoptsova, senior lecturer, research assistant, department of Physics, RSU named for S. Yesenin, Ryazan, Russia;
orcid.org/0009-0009-6224-7555, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
The results of studying the influence of thermal annealing and diffusion on information-correlation properties of porous silicon films surfaces formed by metal-assisted etching on a single-crystal silicon substrate are presented. Studies of porous silicon film surface were carried out by scanning electron microscopy, two-dimensional detrended fluctuation analysis, and average mutual information. According to the research results, heat treatment regimes are shown to affect morphology features of porous silicon films in micron and submicron scales.
Key words: : porous silicon, metal-assisted etching, thermal annealing, diffusion, scanning electron microscopy.