UDC 538.958:535.8
THE EFFECT OF THERMAL ANNEALING OF SEMICONDUCTOR STRUCTURE WITH POROUS SILICON FILM ON MECHANISMS OF CARRIER TRANSFER
V. V. Tregulov, Ph.D. (Tech.), associate professor, Department of Physics, RSU named for S. Yesenin, Ryazan, Russia;
orcid.org/0009-0001-1441-6918, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
G. N. Skoptsova, senior lecturer, research assistant, Department of Physics, RSU named for S. Yesenin, Ryazan, Russia;
orcid.org/0009-0009-6224-7555, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
N. V. Rybina, Ph.D. (Phys. and Math.), associate professor, associate professor, Department of Micro- and Nanoelectronics, RSREU, Ryazan, Russia;
orcid.org/0000-0003-0377-5605, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
N. B. Rybin, Ph.D. (Phys. and Math.), associate professor, associate professor, Department of Micro- and Nanoelectronics, RSREU, Ryazan, Russia;
orcid.org/0000-0003-2000-0158, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
The results of studying the effect of thermal annealing of semiconductor structure with porous silicon film on the features of charge carrier transfer processes and trap concentration are presented. A porous silicon film was grown by metal-assisted etching. The studies were carried out by the methods of currentvoltage and capacitance-voltage characteristics. Upon annealing in temperature range of 700 – 900 ºC for 10 min, the concentration of traps is shown to decrease by more than two orders of magnitude. As annealing temperature increases, rectifying properties of semiconductor structure deteriorate. Also, as a result of annealing, the influence of currents limited by space charge on the mechanisms of charge carrier transport increases.
Key words: : porous silicon, metal-assisted etching, thermal annealing, current-voltage characteristics, capaci-tance-voltage characteristics, traps, charge carrier transfer.