UDC 538.958:535.8
FEATURES OF BAND DIAGRAM OF SEMICONDUCTOR STRUCTURE WITH POROUS SILICON FILM FORMED BY METAL-STIMULATED ETCHING
V. V. Tregulov, Ph.D. (in technical sciences), associate professor, department of Physics, RSU named for S. Yesenin, Ryazan, Russia; orcid.org/0009-0001-1441-6918, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
G. N. Skoptsova, lecturer, research assistant, department of Physics, RSU named for S. Yesenin, Ryazan, Russia;
orcid.org/0009-0009-6224-7555, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
N. V. Rybina, Ph.D. (in physics and mathematics), associate professor, department of Micro- and Nanoelectronics, RSREU, Ryazan, Russia; orcid.org/0000-0003-0377-5605, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
N. B. Rybin, Ph.D. (in physics and mathematics), associate professor, department of Micro- and Nanoelectronics, RSREU, Ryazan, Russia; orcid.org/0000-0003-2000-0158, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
The results of studying frequency dependence of C-V characteristics of semiconductor structure with a porous silicon film grown by metal-stimulated etching are presented. A zone diagram model has been developed. The influence of thermal annealing modes on the nature of conduction inversion mode manifestation is investigated
Key words: : porous silicon, metal-assisted etching, thermal annealing, capacitance-voltage characteristics, traps, band diagram.