UDC 538.958:535.8
STRUCTURE AND ELECTROPHYSICAL PROPERTIES OF POROUS SILICON FILMS WITH A P-N JUNCTION FORMED BY PULSED LASER IRRADIATION
V. S. Khilov, post-graduate student, department of Physics, RSU named after S. Yesenin, Ryazan, Russia; orcid.org/0009-0002-1673-8029, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
V. V. Tregulov, Doctor in Technical Sciences, professor, department of Physics, RSU named after S. Yesenin, Ryazan, Russia;;
orcid.org/0009-0001-1441-6918, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
А. I. Ivanov, post-graduate student, department of Physics, RSU named after S. Yesenin, Ryazan, Russia; orcid.org/0009-0002-7637-1433, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
N. N. Melnik, PhD (in physics and mathematics), senior researcher, Laboratory of Physics of Nonequilibri um Phenomena in Inhomogeneous Systems, Р.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow, Russia;
orcid.org/0000-0002-7058-0333, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
V. G. Litvinov, Dr in physics and mathematics, associate professor, Head of the department of Micro- and Nanoelectronics, RSREU, Ryazan, Russia;
orcid.org/0000-0001-6122-8525, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
N. V. Rybina, PhD (in physics and mathematics), associate professor, department of Micro- and Nanoelectronics, RSREU, Ryazan, Russia;
orcid.org/0000-0003-0377-5605, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
N. B. Rybin, PhD (in physics and mathematics), associate professor, department of Micro- and Nanoelec tronics, RSREU, Ryazan, Russia;
orcid.org/0000-0003-2000-0158, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
The possibility of forming a p-n junction inside a porous silicon film grown by metal-assisted etching by irradiating it with nanosecond laser pulses of ytterbium fiber laser with wavelength of 1064 nm is shown. The study of current-voltage and capacitance-voltage characteristics of the samples showed that their elec trophysical characteristics are significantly affected by traps with deep levels. The irradiation modes in which the base region of p-n junctions has quantum size effect caused by the decrease in nanosized silicon crystallites generation were established. The mechanisms of porous films structure transformation under laser irradiation were established. The influence of traps and quantum size effect on electrophysical and photoelectric characteristics of the structures studied is shown.
Key words: : porous silicon, metal-stimulated etching, p-n junction, laser ablation, Raman scattering, photoelectric characteristics, current-voltage characteristics, capacitance-voltage characteristics, deep en ergy levels.