UDC 621.382.2
ITO FILM-BASED CURRENT SPREADING LAYER FOR BLUE LEDS
Yu. S. Zhidik, Ph.D., Leading Researcher at the Laboratory of IOR TUSUR, Researcher at the Laboratory of the IAO Russian Academy of Scienses, Tomsk, Russia;
orcid.org/0000-0001-7803-2086, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
D. I. Zasukhin, Process Engineer, NIIPP JSC, Tomsk, Russia;
orcid.org/0009-0009-6498-5420, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
О. N. Minin, Head of the Laboratory, NIIPP JSC, Tomsk, Russia;
orcid.org/0009-0004-0109-7593, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
P. E. Troyan, Dr. in technical sciences, Leading Researcher, Laboratory of IOR TUSUR, Tomsk, Russia; orcid.org/0000-0002-7349-0536, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
The problem of forming an ITO film-based current spreading layer for blue LEDs is considered. The aim of this work is to determine optimal parameters of ITO current spreading layers for LEDs based on AlInGaN heterostructures, as well as to develop the technology for depositing ITO films using reactive magnetron sputtering on p-GaN heterostructure surface. Thickness and internal surface resistance of ITO as well as ITO/p-GaN contact resistance have a significant impact on the characteristics of LED containing ITO current spreading layer. These parameters were established by examining the parameters and characteristics of LED crystal with ITO current spreading layer. Next, the technology for depositing ITO films on p-GaN AlInGaN LED heterostructure surface with coupling from high-energy charged particle bombardment during deposition process is developed. The authors show that using In+Sn/ITO system as current spreading layer increases the efficiency of LEDs used by more than 2 times compared to semitransparent Ni/Au contact.
Key words: : LED, ITO, current spreading layer, ohmic contact, heterostructure.