UDC 621.382
DETERMINATION OF PARAMETERS OF HEXAGONAL MOSFETS
D. М. Bakerenkova, testing engineer, RISI, Lytkarino, Russia;
orcid.org/0009-0000-8670-812X, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
А. S. Petrov, PhD (in technical sciences), head of department № 82, RISI, Lytkarino, Russia;
orcid.org/0009-0008-1198-980X, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
The structure of hexagonal MOSFETs was considered in detail, channel width was determined. The do pant concentration in the substrate was calculated from the forward branch of source-substrate junction current-voltage characteristics, source-substrate junction area was determined using electron microscope. The carrier concentration in drift layer for n-channel MOSFET was determined from breakdown voltage values of p+-n--n+ diode. The thickness of gate dielectric was calculated from current-voltage characteristics in high-field Fowler-Nordheim injection mode.
Key words: : hexagonal structure, power MOSFETs.