UDC 538.958:535.8
ELECTROPHYSICAL PROPERTIES OF SEMICONDUCTOR STRUCTURE WITH POROUS SILICON FILM IRRADIATED WITH NANOSECOND YTTERBIUM LASER
V. S. Khilov, graduate student, department of Physics, RSU named for S. Yesenin, Ryazan, Russia; orcid.org/0009-0002-1673-8029, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
V. V. Tregulov, Dr. Sc. (tech.), professor, department of Physics, RSU named for S. Yesenin, Ryazan, Russia; orcid.org/0009-0001-1441-6918, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
А. И. Иванов, graduate student, department of Physics, RSU named for S. Yesenin, Ryazan, Russia; orcid.org/0009-0002-7637-1433, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
N. V. Rybina, Ph.D. (Phys. and Math.), associate professor, associate professor, department of Micro- and Nanoelectronics, RSREU, Ryazan, Russia;
orcid.org/0000-0003-0377-5605, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
N B. Rybin, Ph.D. (Phys. and Math.), associate professor, associate professor, department of Micro- and Nanoelectronics, RSREU, Ryazan, Russia;
orcid.org/0000-0003-2000-0158, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
The effect of irradiation mode parameters with nanosecond laser pulses of ytterbium fiber laser with a wavelength of 1064 nm on the dynamics of changes in concentration of defects with deep energy levels is studied. It is shown that irradiation of por-Si film of por-Si/p-Si semiconductor structure at pulse duration of 4 ns and average pulse energy of 3.60*10-9 J leads to a decrease in concentration of defects with deep en ergy levels by almost two orders of magnitude. A further increase in pulse duration and its average energy leads to an increase in defect concentration. Laser irradiation leads to melting of surface layer of por-Si film. The mechanisms of processes controlling the change in concentration of defects with deep energy levels are established. The authors show that electrophysical characteristics of the studied por-Si/p-Si semiconduc tor structure are largely determined by traps with energy levels characterized by complex distribution in the region of activation energies.
Key words: : porous silicon, nanosecond laser pulses, current-voltage characteristics, capacitance voltage characteristics, deep energy levels, generation-recombination processes.