UDC 004.932.2
ANALYSIS OF DEFECTS DISTRIBUTION IN MULTICRYSTALLINE SILICON INGOT BY THE METHOD OF THREE-DIMENSIONAL VISUALIZATION OF INTERNAL STRUCTURE
A. E. Serebryakov, Ph.D. (Tech.), assistant professor, RSREU, Ryazan, Russia;
orcid.org/0000-0002-8593-7374, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
O. A. Belyakov, quality manager, HELIOS-Resource Ltd., Saransk, Russia;
orcid.org/0000-0003-4138-9684, e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
The study results of three-dimensional model of a multicrystalline ingot internal crystalline structure obtained by directional solidification method using high performance mc-Si (HPM) technology are considered. A three-dimensional model is based on digital image processing of photoluminescence intensity signal from surface of wafers obtained from the ingot under study. The aim is to experimentally study region distribution of defects accumulation in silicon ingot height. The study of internal multi-crystal structure and distribution of defects as an ingot crystallized by classical methods requires a lot of time together with sample destruction along growth direction. This is not applicable in a production process. A given paper presents the results of defects distribution analysis in the direction of silicon crystal growth. Construction of a threedimensional model is carried out using MATLAB software environment.
Key words: digital image processing, multi-crystalline silicon, high-performance mc-Si (HPM), threedimensional model, defects, diffusion contamination, dislocations, photoluminescence image.